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TYPICAL PERFORMANCE CURVES
APT30GN60K(G) 600V
APT30GN60K APT30GN60KG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
TO-220
* 600V Field Stop
* * * * Trench Gate: Low VCE(on) Easy Paralleling 6s Short Circuit Capability 175C Rated
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT30GN60K(G) UNIT Volts
600 30 63 37 75 75A @ 600V 203 -55 to 175
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 430A, Tj = 25C) MIN TYP MAX Units
600 5.0 1.1 5.8 1.5 1.7 25
2
6.5 1.9
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125C)
I CES I GES
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
A nA
7-2008 052-6296 Rev A
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
1000 300
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT30GN60K(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 30A TJ = 150C, R G = 4.3
7,
MIN
TYP
MAX
UNIT
1750 70 50 9.0 165 10 90
VGE = nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area
15V, L = 100H,VCE = 600V VCC = 360V, VGE = 15V, TJ = 150C, R G = 4.3 7 Inductive Switching (25C) VCC = 400V VGE = 15V I C = 30A
75 6 12 14 155 55 525 565 700 12 14 180 75 555 950 895
A
Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 5
s
ns
RG = 4.3 7 TJ = +25C
Turn-on Switching Energy (With Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 30A RG = 4.3 7
55
ns
Turn-on Switching Energy (Wtih Diode) Turn-off Switching Energy
66
TJ = +125C
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.74 N/A 1.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and diode leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
7-2008 Rev A
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6296
TYPICAL PERFORMANCE CURVES
90
V
GE
APT30GN60K(G)
100 15V 13V 12V IC, COLLECTOR CURRENT (A) 80 11V 60 10V 40 9V 20 8V 0 7V 0 2 4 6 8 10 12 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
= 15V
80 IC, COLLECTOR CURRENT (A) 70 60 TJ = 25C 50 40 30 20 10 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
TJ = -55C
TJ = 125C TJ = 175C
FIGURE 1, Output Characteristics(TJ = 25C) 90 80 IC, COLLECTOR CURRENT (A) 70 60 50 TJ = 175C 40 30 20 10 0 0 3 6 9 12 15 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 VCE = 300V 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate Charge 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 IC = 15A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE I = 30A C T = 25C
J
TJ = -55C TJ = 25C TJ = 125C
VCE = 120V
VCE = 480V
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0
2.5 2.0 IC = 30A 1.5 1.0 IC = 15A
IC = 60A
IC = 60A
IC = 30A
0.5 0
9 10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.30
8
25 50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 90
0
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
80 70 60 50 40 7-2008 052-6296 Rev A 30 20 10 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25
1.20
1.10
1.00
0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT30GN60K(G)
16 td(ON), TURN-ON DELAY TIME (ns) 14 VGE = 15V 12 10 8 6 4
VCE = 400V T = 25C, or =125C L = 100H
250 td (OFF), TURN-OFF DELAY TIME (ns)
200
150
VGE =15V,TJ=125C VGE =15V,TJ=25C
100
50
2 RJ = 4.3 G 0 10
20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 60
RG = 4.3, L = 100H, VCE = 400V
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100
RG = 4.3, L = 100H, VCE = 400V
0
VCE = 400V RG = 4.3 L = 100H
50 tr, RISE TIME (ns) tf, FALL TIME (ns)
80
TJ = 125C, VGE = 15V
40
60
TJ = 25C, VGE = 15V
30
40
20
TJ = 25 or 125C,VGE = 15V
10 0
20
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000 EON2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.3
G
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1600 EOFF, TURN OFF ENERGY LOSS (J) 1400 1200 1000 800 600 400 200 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 3000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 4.3
G
0
V = 400V CE V = +15V GE R = 4.3
G
TJ = 125C
2500
TJ = 125C
2000
1500
1000
TJ = 25C
500
TJ = 25C
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 6000 SWITCHING ENERGY LOSSES (J) 5000 4000
Eon2,60A Eoff,60A
V = 400V CE V = +15V GE T = 125C
J
0
0
2500
2000
Eon2,60A Eoff,60A
3000 2000
Eon2,30A
1500
7-2008
1000
Eon2,30A Eoff,30A Eon2,15A Eoff,15A
1000 0
Eoff,30A Eon2,15A
Rev A
Eoff,15A
500 0
052-6296
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
3,000 IC, COLLECTOR CURRENT (A) Cies 100 90 80 70 60 50 40 30 20 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 10
APT30GN60K(G)
1,000 C, CAPACITANCE ( F)
P
500
100 Coes 50 Cres
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0
0.80 0.70 0.60 0.7 0.50 0.40 0.30 0.3 0.20 0.10 0 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 1.0 0.1 0.05 SINGLE PULSE 0.5
Note:
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
130 FMAX, OPERATING FREQUENCY (kHz)
Junction temp. (C)
RC MODEL
50
0.239
0.00158
10 5
T = 125C J T = 75C C D = 50 % = 400V V CE R = 4.3
G
Power (watts)
0.244
0.00349
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss = Pdiss - P cond E on2 + E off TJ - T C R JC
0.258 Case temperature. (C)
0.0793
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 15 20 25 30 35 40 45 50 55 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
5
052-6296
Rev A
7-2008
APT30GN60K(G)
APT40DQ60
10% td(on) tr 90%
Gate Voltage TJ = 125C
Collector Current
V CC
IC
V CE
5% 10% Collector Voltage
5%
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% Collector Voltage tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-220 Package Outline
e1 SAC: Tin, Silver, Copper 2.80 (.110) 2.60 (.102) 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 7.10 (.280) 6.70 (.263)
12.192 (.480)9.912 (.390)
3.70 (.145) 2.20 (.126)
3.40 (.133) Dia. 3.10 (.123)
3.683 (.145)MAX.-
0.48 (.019) 0.44 (.017) 2.85 (.112) 2.65 (.104) 7-2008 4.80 (.189) 4.60 (.181)
14.73 (.580) 12.70 (.500)
Gate Drain Collector Emitter Source
1.77 (.070) 3-Plcs. 1.15 (.045)
1.01 (.040) 3-Plcs. .83 (.033) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190)
Rev A
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6296

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